ANALYTICAL MODEL OF SURFACE POTENTIAL OF DOUBLE SURROUNDING GATE MOSFET

Authors

  • Abhishek Chakraborty, Sourav Bairagya, Angsuman Sarkar

Abstract

This paper presents an analytical model of surface potential of double surrounding gate MOSFET. The model has been developed using a flux-based approach. The variation of surface potentials for change in different device parameters has been provided.

Author Biography

Abhishek Chakraborty, Sourav Bairagya, Angsuman Sarkar

nan

Issue

Vol. 5 No. 1 (2016): Volume 5 Issue 1 (2016)

Section

Articles